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 SMD Type
Dual P-Channel 1.8-V (G-S) MOSFET KI1905DL
SOT-363
1.3
+0.1 -0.1
Transistors IC
Unit: mm
Features
0.65
0.525
0.36
Absolute Maximum Ratings Ta = 25
Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 )* TA=25 -TA=85 Pulsed drain current Continuous source current (diode conduction) * Power dissipation * -TA=25 TA=85 Symbol VDS VGS ID IDM IS PD Tj,Tstg -0.25 0.30 0.16 -55 to +150 0.60 0.43 1.0 -0.23 0.27 0.14 5 secs -8 8 0.57 0.41 Steady State Unit V V A A A W
Operating junction and storage temperature range * Surface Mounted on 1" X 1" FR4 Board.
Thermal Resistance Ratings Ta = 25
Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 /W Unit
Steady State Steady State
* Surface Mounted on 1" X 1" FR4 Board.
+0.05 0.95-0.05
0.1max
+0.1 0.3-0.1 +0.1 2.1-0.1
+0.05 0.1-0.02
+0.1 1.25-0.1
+0.15 2.3-0.15
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1
SMD Type
KI1905DL
Electrical Characteristics Ta = 25
Parameter Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 8V
Transistors IC
Min -0.45
Typ
Max
Unit V
100 -1 -5 -1.0 0.51 0.72 1.0 1.2 -0.8 1.5 -1.2 2.3 0.600 0.85 1.2
nA A A
VDS = -6.4 V, VGS = 0 V VDS =-6.4 V, VGS = 0 V, TJ = 85 VDS =-5 V, VGS = -4.5 V VGS = -4.5 V, ID = -0.57 A
Drain-source on-state resistance
rDS(on)
VGS = -2.5 V, ID = -0.48 A VGS = -1.8V, ID =-0.20A
Forward transconductance Diode forward voltage Total gate charge * Gate-source charge * Gate-drain charge * Turn-on time
gfs VSD Qg Qgs Qgd td(on) tr
VDS = -10 V, ID = -0.57 A IS = -0.23 A, VGS = 0 V
S V
VDS =-4V ,VGS = -4.5 V , ID= -0.57A
0.17 0.16 6 12 50 20 20 40
nC
Turn-off time Source-Drain Reverse Recovery Time * Pulse test: PW 300 is duty cycle 2%.
td(off) tf trr
VDD = -4V , RL = 8 , ID =-0.5A , VGEN =-4.5V , RG = 6
25 10 10
ns
IF = -0.23 A, di/dt = 100 A/
s
20
Marking
Marking QB
2
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